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DI028P03PT

DI028P03PT

MOSFET MOSFET, PowerQFN 3x3, -30V, -28A, P, 40W

Category

Mfr Part #

DI028P03PT

Mfr

Life Cycle

New Product

HSN Code

85412900

Diotec Semiconductor

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Suppliers

TME

Part Status :

TME

Stock : 0

Packaging Type

-

VendorPart#

DI028P03PT-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 5000
Mult: 5000

0

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

8 Days

Ware House

US Warehouse

HTS Code

85412900

Date Code

Within 2 years

Min: 1250
Mult: 1

0

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI028P03PT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

637-DI028P03PT

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

Specifications

Case

QFN3X3
Current - Continuous Drain (Id) @ 25°C

28A (Tc)
Drain current

-28A
Drain to Source Voltage (Vdss)

30 V
Drain-source voltage

-30V
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
FET Feature

-
FET Type

P-Channel
Gate charge

30nC
Gate Charge (Qg) (Max) @ Vgs

30 nC @ 10 V
Gate-source voltage

±20V
Grade

-
Input Capacitance (Ciss) (Max) @ Vds

2060 pF @ 15 V
Kind of channel

enhanced
Kind of package

reel
Kind of package

tape
Manufacturer

DIOTEC SEMICONDUCTOR
Mounting

SMD
Mounting Type

Surface Mount
On-state resistance

9.5mΩ
Operating Temperature

-55°C ~ 150°C (TJ)
Package / Case

8-PowerVDFN
Polarisation

Unipolar
Power dissipation

40W
Power Dissipation (Max)

40W (Tc)
Pulsed drain current

-80A
Qualification

-
Rds On (Max) @ Id, Vgs

9mOhm @ 20A, 10V
Supplier Device Package

8-QFN (3x3)
Technology

MOSFET (Metal Oxide)
Type of transistor

P-MOSFET
Vgs (Max)

±20V
Vgs(th) (Max) @ Id

2.5V @ 250µA