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DI028N10PQ2-AQ

DI028N10PQ2-AQ

Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6

Category

Mfr Part #

DI028N10PQ2-AQ

Mfr

Life Cycle

HSN Code

0000

Diotec Semiconductor

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Suppliers

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4555500

Factory Lead Time

64 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

Part Status :

TME

Stock : 0

Packaging Type

-

VendorPart#

DI028N10PQ2-AQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Application

automotive industry
Case

QFN5x6
Channel Type

Dual N Channel
Continuous Drain Current Id N Channel

28A
Continuous Drain Current Id P Channel

-
Drain current

18A
Drain Source On State Resistance N Channel

0.021ohm
Drain Source On State Resistance P Channel

-
Drain Source Voltage Vds N Channel

100V
Drain Source Voltage Vds P Channel

-
Drain-source voltage

100V
Gate charge

22nC
Gate-source voltage

±20V
hazardous

false
Kind of channel

enhanced
Kind of package

reel
Kind of package

tape
Manufacturer

DIOTEC SEMICONDUCTOR
Mounting

SMD
No. of Pins

8Pins
On-state resistance

26mΩ
Operating Temperature Max

150°C
Polarisation

Unipolar
Power dissipation

32.7W
Power Dissipation N Channel

32.7W
Power Dissipation P Channel

-
Product Range

-
productTraceability

No
Pulsed drain current

130A
Qualification

AEC-Q101
rohsCompliant

Yes
rohsPhthalatesCompliant

TBA
SVHC

No SVHC (27-Jun-2024)
tariffCode

85411000
Transistor Case Style

QFN
Type of transistor

N-MOSFET