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DI017N10D1

DI017N10D1

MOSFETs

Category

Mfr Part #

DI017N10D1

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

9 Days

Ware House

US Warehouse

HTS Code

85412900

Date Code

Within 2 years

Min: 2500
Mult: 2500

0

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

637-DI017N10D1

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI017N10D1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 2500
Mult: 2500

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

DI017N10D1-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drain to Source Voltage (Vdss)

100 V

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

34 nC @ 5 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

800 pF @ 25 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max)

79W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

105mOhm @ 10A, 10V

Supplier Device Package

TO-252 (DPAK)

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±16V

Vgs(th) (Max) @ Id

2V @ 250µA