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DMP2004UFG-13

DMP2004UFG-13

Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W

Mfr Part #

DMP2004UFG-13

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

85412900

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

DMP2004UFG-13

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 3000
Mult: 3000

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

31-DMP2004UFG-13-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Min: 3000
Mult: 3000

0

Specifications

Case

PowerDI3333-8

Current - Continuous Drain (Id) @ 25°C

115A (Tc)

Drain current

-95A

Drain to Source Voltage (Vdss)

20 V

Drain-source voltage

-20V

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

FET Feature

-

FET Type

P-Channel

Gate charge

83nC

Gate Charge (Qg) (Max) @ Vgs

83 nC @ 10 V

Gate-source voltage

±12V

Input Capacitance (Ciss) (Max) @ Vds

3840 pF @ 10 V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

DIODES INCORPORATED

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

7mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-PowerVDFN

Polarisation

Unipolar

Power dissipation

2.4W

Power Dissipation (Max)

1W (Ta)

Pulsed drain current

-180A

Rds On (Max) @ Id, Vgs

3mOhm @ 15A, 10V

Supplier Device Package

PowerDI3333-8

Technology

MOSFET (Metal Oxide)

Type of transistor

P-MOSFET

Vgs (Max)

±12V

Vgs(th) (Max) @ Id

1.1V @ 250µA