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C3M0120090D

MOSFET N Trench 900V 23A(Tc) 3.5V @ 3mA 155 mΩ @ 15A,15V TO-247(AC) RoHS

TME

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TME

Stock : 82

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VendorPart#

C3M0120090D

Ware House

Poland Warehouse

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Mult: 1

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Case	TO247-3
Continuous Drain Current (Id) @ 25°C	23A(Tc)
Drain current	23A
Drain to Source Voltage(Vdss)	900V
Drain-source voltage	900V
FET Type	N Channel
Gate charge	17.3nC
Gate-source voltage	-8...19V
Kind of channel	enhanced
Manufacturer	Wolfspeed(CREE)
Mounting	THT
On-state resistance	120mΩ
Polarisation	Unipolar
Power dissipation	97W
Power Dissipation-Max (Ta=25°C)	97W(Tc)
Rds On (Max) @ Id, Vgs	155mΩ @ 15A,15V
Reverse recovery time	24ns
Technology	SiC
Technology	C3M™
Type of transistor	N-MOSFET
Vgs(th) (Max) @ Id	3.5V @ 3mA