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C3M0065100K

MOSFET N Channel 1000V 35A(Tc) 3.5V @ 5mA 78mΩ @ 20A,15V TO-247-4 RoHS

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C3M0065100K

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Case	TO247-4
Continuous Drain Current (Id) @ 25°C	35A(Tc)
Drain current	35A
Drain to Source Voltage(Vdss)	1000V
Drain-source voltage	1kV
Features of semiconductor devices	Kelvin terminal
FET Type	N Channel
Gate charge	35nC
Gate-source voltage	-8...19V
Kind of channel	enhanced
Manufacturer	Wolfspeed(CREE)
Mounting	THT
On-state resistance	65mΩ
Polarisation	Unipolar
Power dissipation	113.5W
Power Dissipation-Max (Ta=25°C)	113.5W(Tc)
Rds On (Max) @ Id, Vgs	78mΩ @ 20A,15V
Reverse recovery time	14ns
Technology	C3M™
Technology	SiC
Type of transistor	N-MOSFET
Vgs(th) (Max) @ Id	3.5V @ 5mA