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BXW3M1K7H

BXW3M1K7H

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W

Mfr Part #

BXW3M1K7H

Life Cycle

NEW

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

BXW3M1K7H

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247-3

Drain current

3A

Drain-source voltage

1.7kV

Gate charge

15nC

Gate-source voltage

-3...20V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

BRIDGELUX

Mounting

THT

On-state resistance

1.69Ω

Polarisation

Unipolar

Power dissipation

69W

Pulsed drain current

12A

Technology

SiC

Type of transistor

N-MOSFET