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BXW10M1K2H

BXW10M1K2H

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W

Mfr Part #

BXW10M1K2H

Life Cycle

NEW

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

BXW10M1K2H

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247-3

Drain current

10A

Drain-source voltage

1.2kV

Gate charge

29nC

Gate-source voltage

-3...20V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

BRIDGELUX

Mounting

THT

On-state resistance

610mΩ

Polarisation

Unipolar

Power dissipation

80.6W

Pulsed drain current

40A

Technology

SiC

Type of transistor

N-MOSFET