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BSDH10G65E2

BSDH10G65E2

SiC Schottky Diodes 650V 10A High Surge SiC diode in TO220-2

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2873

Packaging Type

Tube

VendorPart#

118-BSDH10G65E2-ND

Ware House

US Warehouse

HTS Code

8541100080

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 2913

Packaging Type

EACH

VendorPart#

4217874

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 2869

Packaging Type

VendorPart#

652-BSDH10G65E2

Ware House

US Warehouse

HTS Code

8541100080

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

18 Days

Ware House

US Warehouse

HTS Code

8541109000

Date Code

Within 2 years

Quantity

Min: 750

Mult: 1

Order Value

Specifications

Average Forward Current	10A
Capacitance @ Vr, F	323pF @ 1V, 1MHz
Current - Average Rectified (Io)	10A
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Diode Case Style	TO-220
Diode Configuration	Single
Diode Mounting	Through Hole
euEccn	NLR
hazardous	false
Mounting Type	Through Hole
No. of Pins	2 Pin
Operating Temperature - Junction	-55°C ~ 175°C
Operating Temperature Max	175°C
Package / Case	TO-220-2
Packaging	tube
Product Range	TUK SGACK902S Keystone Coupler
productTraceability	No
Qualification	-
Repetitive Peak Reverse Voltage	650V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package	TO-220-2
SVHC	Boric acid (14-Jun-2023)
tariffCode	85411000
Technology	SiC (Silicon Carbide) Schottky
Total Capacitive Charge	14.5nC
usEccn	EAR99
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A