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BGH50N65HS1

BGH50N65HS1

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3

Mfr Part #

BGH50N65HS1

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 34

Packaging Type

-

VendorPart#

BGH50N65HS1

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Case

TO247-3

Collector current

50A

Collector-emitter voltage

650V

Features of semiconductor devices

integrated anti-parallel diode

Gate charge

308nC

Gate-emitter voltage

±20V

Kind of package

tube

Manufacturer

BASiC SEMICONDUCTOR

Mounting

THT

Power dissipation

357W

Pulsed collector current

200A

Technology

Trench

Technology

SiC SBD

Technology

Field Stop

Turn-off time

256ns

Turn-on time

54ns

Type of transistor

IGBT