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B2M035120YP

B2M035120YP

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W

Mfr Part #

B2M035120YP

Life Cycle

NEW

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

B2M035120YP

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247PLUS-4

Drain current

60A

Drain-source voltage

1.2kV

Features of semiconductor devices

Kelvin terminal

Gate charge

115nC

Gate-source voltage

-4...18V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

BASiC SEMICONDUCTOR

Mounting

THT

On-state resistance

35mΩ

Polarisation

Unipolar

Power dissipation

375W

Pulsed drain current

190A

Technology

SiC

Type of transistor

N-MOSFET