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AOY66923

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AOY66923

Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 16.5A; 6.2W; IPAK

Category

THT N Channel Transistors

Mfr Part #

AOY66923

Mfr

Life Cycle

HSN Code

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Suppliers

DigiKey Electronics

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

785-1835-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

0

TME

TME

Part Status :

TME

Stock : 0

Packaging Type

-

VendorPart#

AOY66923

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

0

Specifications

Case	IPAK
Current - Continuous Drain (Id) @ 25°C	16.5A (Ta), 58A (Tc)
Drain current	16.5A
Drain to Source Voltage (Vdss)	100 V
Drain-source voltage	100V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate charge	35nC
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Gate-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	1725 pF @ 50 V
Kind of channel	enhanced
Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Mounting	THT
Mounting Type	Through Hole
On-state resistance	11mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-251-3 Stub Leads, IPak
Packaging	tube
Part Status	Active
Polarisation	Unipolar
Power dissipation	6.2W
Power Dissipation (Max)	6.2W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs	11mOhm @ 20A, 10V
Supplier Device Package	TO-251B
Technology	MOSFET (Metal Oxide)
Technology	AlphaSGT™
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.6V @ 250µA