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AOT66920L

AOT66920L

presales TO-220-3 RoHS

Category

Mfr Part #

AOT66920L

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

AOT66920L

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

785-1840-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO220-3

Current - Continuous Drain (Id) @ 25°C

22.5A (Ta), 80A (Tc)

Drain current

22.5A

Drain to Source Voltage (Vdss)

100 V

Drain-source voltage

100V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N-Channel

Gate charge

50nC

Gate Charge (Qg) (Max) @ Vgs

50 nC @ 10 V

Gate-source voltage

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500 pF @ 50 V

Kind of channel

enhanced

Manufacturer

ALPHA & OMEGA SEMICONDUCTOR

Mounting

THT

Mounting Type

Through Hole

On-state resistance

8mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3

Packaging

tube

Part Status

Active

Polarisation

Unipolar

Power dissipation

8.3W

Power Dissipation (Max)

8.3W (Ta), 100W (Tc)

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Supplier Device Package

TO-220

Technology

MOSFET (Metal Oxide)

Technology

AlphaSGTâ„¢

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2.5V @ 250µA