FUJI ELECTRIC

YA972S6R

FUJI ELECTRIC - YA972S6R - Standard Recovery Diode, 600 V, 10 A, Single, 1.55 V, 50 ns, 100 A

2MBI100S-120-50

FUJI ELECTRIC - 2MBI100S-120-50 - IGBT Array & Module Transistor, Dual Pack, N Channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module

2SK3590-01

FUJI ELECTRIC - 2SK3590-01 - Power MOSFET, N Channel, 150 V, 57 A, 0.041 ohm, TO-220AB, Through Hole

7MBP25RA-120-55

FUJI ELECTRIC - 7MBP25RA-120-55 - IGBT Array & Module Transistor, N Channel, 25 A, 2.6 V, 198 W, 1.2 kV, Module

YG865C15R

FUJI ELECTRIC - YG865C15R - Small Signal Schottky Diode, Dual Common Cathode, 150 V, 10 A, 900 mV, 150 A, 150 °C

2MBI200U2A-060-50

FUJI ELECTRIC - 2MBI200U2A-060-50 - IGBT Array & Module Transistor, N Channel, 200 A, 2.45 V, 660 W, 600 V, Module

2MBI100U4A-120-50

FUJI ELECTRIC - 2MBI100U4A-120-50 - IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

FMP20N60S1

FUJI ELECTRIC - FMP20N60S1 - Power MOSFET, N Channel, 600 V, 20 A, 0.161 ohm, TO-220AB, Through Hole

6MBP25VAA-120-50

FUJI ELECTRIC - 6MBP25VAA-120-50 - IGBT Array & Module Transistor, N Channel, 25 A, 2.1 V, 166 W, 1.2 kV, Module

FMV20N60S1

FUJI ELECTRIC - FMV20N60S1 - Power MOSFET, N Channel, 600 V, 20 A, 0.161 ohm, TO-220F, Through Hole

6MBP35XSD-060-50

FUJI ELECTRIC - 6MBP35XSD-060-50 - Intelligent Power Module (IPM), 6-Chip Circuit Of Three Phase Bridge, IGBT, 600 V, 35 A, 1500 Vrms

FMW20N60S1HF

FUJI ELECTRIC - FMW20N60S1HF - Power MOSFET, N Channel, 600 V, 20 A, 0.161 ohm, TO-247, Through Hole

YG868C15R

FUJI ELECTRIC - YG868C15R - Small Signal Schottky Diode, Dual Common Cathode, 150 V, 15 A, 900 mV, 225 A, 150 °C

6MBP15XSD-060-50

FUJI ELECTRIC - 6MBP15XSD-060-50 - Intelligent Power Module (IPM), 6-Chip Circuit Of Three Phase Bridge, IGBT, 600 V, 15 A, 1500 Vrms

2MBI200VA-060-50

FUJI ELECTRIC - 2MBI200VA-060-50 - IGBT Array & Module Transistor, N Channel, 200 A, 1.6 V, 650 W, 600 V, Module

FMW30N60S1HF

FUJI ELECTRIC - FMW30N60S1HF - Power MOSFET, N Channel, 600 V, 30 A, 0.106 ohm, TO-247, Through Hole

7MBR25SA-120-50

FUJI ELECTRIC - 7MBR25SA-120-50 - IGBT Array & Module Transistor, 7 Pack, N Channel, 25 A, 2.1 V, 180 W, 1.2 kV, Module

2MBI450VE-120-50

FUJI ELECTRIC - 2MBI450VE-120-50 - IGBT Array & Module Transistor, N Channel, 520 A, 1.2 kV, 3.35 kW, Module

2MBI300VH-120-50

FUJI ELECTRIC - 2MBI300VH-120-50 - IGBT Array & Module Transistor, N Channel, 300 A, 1.2 kV, 1.11 kW, Module

6MBP30RH-060-50

FUJI ELECTRIC - 6MBP30RH-060-50 - IGBT Array & Module Transistor, N Channel, 30 A, 2.7 V, 85 W, 600 V, Module

2MBI150VA-120-50

FUJI ELECTRIC - 2MBI150VA-120-50 - IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 785 W, 1.2 kV, Module

2MBI75VA-120-50

FUJI ELECTRIC - 2MBI75VA-120-50 - IGBT Array & Module Transistor, N Channel, 75 A, 1.85 V, 390 W, 1.2 kV, Module

7MBR50VB-120-50

FUJI ELECTRIC - 7MBR50VB-120-50 - IGBT Array & Module Transistor, N Channel, 50 A, 1.85 V, 280 W, 1.2 kV, Module

2MBI150U4A-120-50

FUJI ELECTRIC - 2MBI150U4A-120-50 - IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module

FMV30N60S1

FUJI ELECTRIC - FMV30N60S1 - Power MOSFET, N Channel, 600 V, 30 A, 0.106 ohm, TO-220F, Through Hole